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APTGT75TA60PG
Triple phase leg Trench + Field Stop IGBT(R) Power Module
VBUS1 VBUS2 VBUS3 G1 G3 G5
VCES = 600V IC = 75A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control
W
E1
U
E3
V
E5
G2
G4
G6
E2 0/VBUS1
E4 0/VBUS2
E6 0/VBUS3
Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Very low (12mm) profile * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge * RoHS Compliant Max ratings 600 100 75 140 20 250 150A @ 550V Unit V A V W
June, 2006 1-5 APTGT75TA60PG - Rev 1
VBUS 1
VBUS 2
VBUS 3
G1 0/VBUS 1 E1 E2 G2 0/VBUS 2
G3 E3 E4 G4 0/VBUS 3
G5 E5 E6 G6
U
V
W
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C
Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT75TA60PG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 75A Tj = 150C VGE = VCE, IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 75A R G = 4.7 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 75A R G = 4.7 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 75A Tj = 25C R G = 4.7 Tj = 150C
Min
Typ 4620 300 140 110 45 200 40 120 50 250 60 0.35 0.6 2.2 2.6
Max
Unit pF
ns
ns
mJ mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=600V
IF = 75A VGE = 0V
IF = 75A VR = 300V
di/dt =2000A/s
mJ
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APTGT75TA60PG - Rev 1
75 1.6 1.5 100 150 3.6 7.6 0.85 1.8
2 V ns C
June, 2006
APTGT75TA60PG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.60 0.98 175 125 100 5 250 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M6
SP6-P Package outline (dimensions in mm)
5 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
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APTGT75TA60PG - Rev 1
June, 2006
APTGT75TA60PG
Typical Performance Curve
150 125
TJ =125C
Output Characteristics (VGE=15V)
T J=25C
Output Characteristics 150
TJ = 150C VGE=19V
125
T J=150C
IC (A)
100 75 50 25 0 0 0.5 1
T J=25C
100 IC (A) 75 50
VGE=13V VGE=15V
VGE =9V
25 0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
150 125 100 75 50 25
Transfert Characteristics 5
T J=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 4.7 TJ = 150C Eoff
4 E (mJ) 3 2
IC (A)
Er Eon
TJ=150C TJ=125C T J=25C
1 0 11 12 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175
Eoff
0 5 6 7 8 9 10 VGE (V) Switching Energy Losses vs Gate Resistance 5 4 E (mJ) 3 2 1
Eon Er VCE = 300V VGE =15V IC = 75A T J = 150C
100
125
150
150 125 IC (A) 100 75 50 25 0 35 40 0
VGE =15V TJ =150C RG=4.7
Eon
0 0 5 10 15 20 25 30 Gate Resistance (ohms)
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds 1 10 0.9 IGBT
0.5
0.05 0 0.00001
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APTGT75TA60PG - Rev 1
June, 2006
0.7
APTGT75TA60PG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 20 40 IC (A) 60 80 100
Hard switching ZVS VCE=300V D=50% RG=4.7 TJ =150C Tc=85C ZCS
Forward Characteristic of diode 150 125 100 IF (A) 75 50 25
TJ=25C T J=125C TJ =150C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W)
Diode
1 0.8 0.6 0.4 0.2 0 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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June, 2006

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